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HomeMIT 6.774 Physics of Microfabrication: Front End Processing, Fall 20046. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

1:13:37

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7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models. Duration: 1:13:37.